About
French engineer, doctorate in power electronics, working on wide-bandgap converters since 2017 — from device behavior to the boards that ship.
I am a French engineer with a doctorate in power electronics, specialized in wide-bandgap semiconductors — GaN HEMTs and SiC MOSFETs. An engineering degree in electrical and electronic engineering in France, followed by a PhD on WBG converters, set the trajectory; I have worked with these devices ever since.
My work covers the whole chain from device physics to converter architecture: gate-driver design, EMI/EMC mitigation, and the power-loop layout and parasitics that MHz switching exposes. I draw the schematic, route the board, write the firmware and put the result on the bench myself.
Since 2022 I have worked as an R&D engineer in WBG power conversion, building converters that switch faster, sit smaller and waste less — and that stay quiet and reliable enough to ship.
Engineering degree in electrical and electronic engineering — Grenoble INP, France. Power electronics major; first silicon converter designs and a lasting preference for hardware.
PhD in power electronics — wide-bandgap converters. Active dv/dt control of SiC MOSFETs, gate-driver design and the layout discipline that fast switches impose.
Postdoc / R&D engineer. EMI characterization of GaN converters, near-field metrology and industrial collaborations.
R&D engineer — WBG power conversion. GaN totem-pole PFC, 800 V SiC charging and the firmware that keeps MHz control deterministic.
Toolbox
Tools and domains I reach for weekly — from device-level modeling to compliance work.
Contact
The fastest route is email — I am always up for a technical discussion on WBG hardware.
Email: camille.dupont@example.com